PATENT
- Ho Jin Ma, Young-Jo Park, Jae-Woong Ko, Ha-Neul Kim, Jae-Wook Lee, Mi-Ju Kim, and Su-Been Ham, “Plasma etching device parts for semiconductor manufacturing including magnesium oxide-gadolinium oxide composite sintered body and manufacturing method thereof”, 10-2024-0045277, Korea [출원]
- Ho Jin Ma, Young-Jo Park, Jae-Woong Ko, Ha-Neul Kim, Jae-Wook Lee and Mi-Ju Kim, “High-entropy ceramic sintered body with plasma resistance and preparation method thereof”, 10-2024-0030780, Korea [출원]
- Young-Jo Park, Jae-Woong Ko, Ha-Neul Kim, Ho Jin Ma Jae-Wook Lee and Mi-Ju Kim, “Sintering aid of binary component for MgO sintering”, 10-2023-0160930, Korea [출원]
- Young-Jo Park, Jae-Woong Ko, Ha-Neul Kim, Ho Jin Ma Jae-Wook Lee and Mi-Ju Kim, “Sintering aid of ternary component for MgO sintering”, 10-2023-0162444, Korea [출원]
- Young-Jo Park, Jae-Woong Ko, Ha-Neul Kim, Ho Jin Ma Jae-Wook Lee and Mi-Ju Kim, “YAG sintered body comprising excess Al, member for plasma etching device including the same, and manufacturing method thereof”, 10-2023-0013931, Korea [출원]
- Ho Jin Ma, Young-Jo Park, Jae-Woong Ko, Ha-Neul Kim, Jae-Wook Lee and Mi-Ju Kim, “Plasma etching device parts for semiconductor manufacturing including yttrium-based composite sintered body and manufacturing method thereof”, 10-2022-0112622, Korea [등록]
- Ha-Neul Kim, Young-Jo Park, Jae-Woong Ko, Ho Jin Ma, Jae-Wook Lee and Hyeon-Myeong Oh, “Preparation method of transparent yttria through hot-press sintering, transparent yttria prepared by the same, and laser oscillator comprising the same”, 10-2022-0119038, Korea [출원]
- Young-Jo Park, Jae-Woong Ko, Mi-Ju Kim, Ha-Neul Kim, Ho Jin Ma and Jae-Wook Lee, “Low-temperature pressureless sintered Si3N4ceramics composition with high hardness, Si3N4 ceramics and preparation method thereof”, 10-2022-0086027, Korea [출원]
- Ho Jin Ma and Do Kyung Kim, “Nanocomposite ceramics for high power infrared lasers”, 10-2249369, Korea [등록]
- Seung-Jun Lee, Ho Jin Ma, Joonkyo Jung, Jonghwa Shin, Do Kyung Kim and Jinwoo Park, “Mie 공진을 활용한 고온 유전율 측정 시스템 및측정 방법”, 10-2138266, Korea [등록]